transistor(pnp) features ? complementary t o mmst390 4 marking:k 5 n m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 40 v v ceo collector - emitter voltage - 40 v v ebo emitter - base voltage - 5 v i c collector current - 200 m a p c collector power dissipation 200 m w r ja thermal resistance fr om j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown volt age v (br) cbo * i c = - 1 0 a , i e =0 - 40 v collector - emitter breakdown voltage v (br) c e o * i c = - 1 ma, i b =0 - 40 v emitter - base breakdown voltage v (br)eb o * i e = - 1 0 a , i c =0 - 5 v base cut - off current i bl * v c e = - 30 v, v eb(off) = - 3 v - 50 n a collector cut - off curre nt i c e x * v c e = - 30 v, v eb(off) = - 3 v - 50 n a v ce = - 1 v, i c = - 100 a 60 v ce = - 1 v, i c = - 1m a 80 dc current gain h fe * v ce = - 1 v, i c = - 10m a 100 300 i c = - 10m a, i b = - 1 ma - 0.2 v collector - emitter saturation voltage v ce(sat) * i c = - 50m a, i b = - 5 ma - 0.3 v i c = - 10m a, i b = - 1 ma - 0.65 - 0.85 v base - emitter saturation voltage v b e(sat) * i c = - 50m a, i b = - 5 ma - 0.95 v transition frequency f t v ce = - 20 v,i c = - 10 ma , f=1 00 mhz 250 mhz collector output capacitance c ob v cb = - 5 v, i e =0, f=1mhz 4 .5 pf collector output c apacitance c i b v e b = - 0.5 v, i e =0, f=1mhz 10 pf delay time t d 35 ns rise time t r v c c = - 3 v, v be(off) = - 0.5v, i c = - 10m a, i b 1 = - 1ma 35 ns storage time t s 225 ns fall time t f v c c = 3 v, i c = - 10m a, i b 1 = i b 2 = - 1ma 75 ns * p ulse test: p ulse w idth 3 00 s, d uty c ycle 2.0%. so t C 3 23 1. base 2. emitter 3. collector MMST3906 1 date:2011/05 www.htsemi.com semiconductor jinyu
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